[B-2-1] A Novel High Density EEPROM Cells Using Poly-Gate Hole (POLE) Structure Suitable for Low Power Applications

Masataka Takebuchi、Jun-ichiro Noda、Daisuke Tohyama、Shu Ueno、Kanji Osari、Kuniyoshi Yoshikawa (1.Toshiba Corp.、2.Toshiba Microelectronics Corp.)

https://doi.org/10.7567/SSDM.1995.B-2-1