[C-2-3] On the Use of Indium and Gallium as P-Type Dopants in Si 0.1 μm MOSFETs

Serge Biesemans、Stefan Kubicek、Joris VanLaer、Fred Loosen、Luc Geenen、Karen Maex、Kristin DeMeyer (1.ASP division, IMEC)

https://doi.org/10.7567/SSDM.1995.C-2-3