Fabrication of a Si Nanometer Column pn Junction and Implanted Damage Evaluation by TEM

H. Sukesako; K. Inoue; T. Kawasaki; H. Sakaue; S. Shingubara; T. Takahagi; Y. Horiike

doi:https://doi.org/10.7567/SSDM.1995.C-3-3

[C-3-3] Fabrication of a Si Nanometer Column pn Junction and Implanted Damage Evaluation by TEM

H. Sukesako、K. Inoue、T. Kawasaki、H. Sakaue、S. Shingubara、T. Takahagi、Y. Horiike (1.Hiroshima University, Dept. of Electrical Engineering、2.Toyo University, Dept. of Electrical Engineering)

https://doi.org/10.7567/SSDM.1995.C-3-3

1995 International Conference on Solid State Devices and Materials

[C-3-3] Fabrication of a Si Nanometer Column pn Junction and Implanted Damage Evaluation by TEM