Fabrication of a Si Nanometer Column pn Junction and Implanted Damage Evaluation by TEM

H. Sukesako; K. Inoue; T. Kawasaki; H. Sakaue; S. Shingubara; T. Takahagi; Y. Horiike

doi:https://doi.org/10.7567/SSDM.1995.C-3-3

[C-3-3] Fabrication of a Si Nanometer Column pn Junction and Implanted Damage Evaluation by TEM

H. Sukesako, K. Inoue, T. Kawasaki, H. Sakaue, S. Shingubara, T. Takahagi, Y. Horiike (1.Hiroshima University, Dept. of Electrical Engineering, 2.Toyo University, Dept. of Electrical Engineering)

https://doi.org/10.7567/SSDM.1995.C-3-3

1995 International Conference on Solid State Devices and Materials

[C-3-3] Fabrication of a Si Nanometer Column pn Junction and Implanted Damage Evaluation by TEM