[C-4-3] A Post Gigabit Generation Flash Memory Shallow Trench Isolation Scheme. The LATI-STI Process (LArge Tilt Implanted Sloped Trench Isolation) Using 100% CMP Planarization
S. DELEONIBUS、M. HEITZMANN、Y. GOBIL、F. MARTIN、O. DEMOLLIENS、J. -C. GUIBERT
(1.LETI(CEA) Dept de Microelectronique CENG)
https://doi.org/10.7567/SSDM.1995.C-4-3