The Japan Society of Applied Physics

[C-4-3] A Post Gigabit Generation Flash Memory Shallow Trench Isolation Scheme. The LATI-STI Process (LArge Tilt Implanted Sloped Trench Isolation) Using 100% CMP Planarization

S. DELEONIBUS、M. HEITZMANN、Y. GOBIL、F. MARTIN、O. DEMOLLIENS、J. -C. GUIBERT (1.LETI(CEA) Dept de Microelectronique CENG)

https://doi.org/10.7567/SSDM.1995.C-4-3