[C-4-4] Highly Manufacturable Shallow Trench Isolation for Giga Bit DRAM

B. H Roh、Y. H Cho、Y. G Shin、C. G hong、S. D Gwun、K. Y Lee、H. G Kang、K. N kim、J. W Park (1.R&D Center, Samsung Electronics Co., LTD.)

https://doi.org/10.7567/SSDM.1995.C-4-4