Deep Levels and Conduction Mechanism in Low-Temperature GaAs Grown by Molecular Beam Epitaxy

S. Shiobara; T. Hashizume; H. Hasegawa

doi:https://doi.org/10.7567/SSDM.1995.D-1-3

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜 1995年8月24日
International House, Osaka, Japan

[D-1-3] Deep Levels and Conduction Mechanism in Low-Temperature GaAs Grown by Molecular Beam Epitaxy

S. Shiobara、T. Hashizume、H. Hasegawa (1.Research Center for Interface Quantum Electronics and Department of Electrical Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.1995.D-1-3

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