Subpicosecond Carrier Lifetime in Low-Temperature-Grown GaAs Layer on (311)-Oriented Substrate

T. M. Cheng; C. Y. Chang; G. R. Lin; F. Ganikhanov; C. L. Pan; J. H. Huang

doi:https://doi.org/10.7567/SSDM.1995.D-2-3

[D-2-3] Subpicosecond Carrier Lifetime in Low-Temperature-Grown GaAs Layer on (311)-Oriented Substrate

T. M. Cheng、C. Y. Chang、G. R. Lin、F. Ganikhanov、C. L. Pan、J. H. Huang (1.Institute of Electronics, National Chiao-Tung University、2.Institute of Electro-Optical Engineering, National Chiao-Tung University、3.Materials of Science Center, National Tsing-Hua University)

https://doi.org/10.7567/SSDM.1995.D-2-3

1995 International Conference on Solid State Devices and Materials

[D-2-3] Subpicosecond Carrier Lifetime in Low-Temperature-Grown GaAs Layer on (311)-Oriented Substrate