[D-3-5] Lateral Tunneling Devices on GaAs(111)A and (311)A Patterned Substrates Grown by MBE Using Only Silicon Dopant

H. Ohnishi, M. Hirai, K. Fujita, T. Watanabe (1.ATR Optical and Radio Communications Research Laboratories)

https://doi.org/10.7567/SSDM.1995.D-3-5