[D-3-5] Lateral Tunneling Devices on GaAs(111)A and (311)A Patterned Substrates Grown by MBE Using Only Silicon Dopant

H. Ohnishi、M. Hirai、K. Fujita、T. Watanabe (1.ATR Optical and Radio Communications Research Laboratories)

https://doi.org/10.7567/SSDM.1995.D-3-5