Self-Sustained Pulsation in 650nm-Band AlGaInP Visible Laser Diodes with Highly Doped Saturable Absorbing Layer

Hideto ADACHI; Satoshi KAMIYAMA; Isao KIDOGUCHI; Takeshi UENOYAMA

doi:https://doi.org/10.7567/SSDM.1995.D-4-5

[D-4-5] Self-Sustained Pulsation in 650nm-Band AlGaInP Visible Laser Diodes with Highly Doped Saturable Absorbing Layer

Hideto ADACHI、Satoshi KAMIYAMA、Isao KIDOGUCHI、Takeshi UENOYAMA (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.、2.Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.1995.D-4-5

1995 International Conference on Solid State Devices and Materials

[D-4-5] Self-Sustained Pulsation in 650nm-Band AlGaInP Visible Laser Diodes with Highly Doped Saturable Absorbing Layer