[D-6-3] A Buried-Channel WNx/W Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for Single-Chip Front-End MMIC in Personal Handy Phone System

Kazuya NISHIHORI, Atsushi KAMEYAMA, Yoshiaki KITAURA, Yoshiko IKEDA, Masami NAGAOKA, Yoshikazu TANABE, Masakatsu MIHARA, Misao YOSHIMURA, Mayumi HIROSE, Naotaka UCHITOMI (1.ULSI Research Laboratories, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1995.D-6-3