[D-6-3] A Buried-Channel WNx/W Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for Single-Chip Front-End MMIC in Personal Handy Phone System

Kazuya NISHIHORI、Atsushi KAMEYAMA、Yoshiaki KITAURA、Yoshiko IKEDA、Masami NAGAOKA、Yoshikazu TANABE、Masakatsu MIHARA、Misao YOSHIMURA、Mayumi HIROSE、Naotaka UCHITOMI (1.ULSI Research Laboratories, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1995.D-6-3