[D-6-6] 0.86eV Platinum Schottky Barrier on Indium Phosphide by In-Situ Electrochemical Process and Its Application to MESFETs

S. Uno、T. Hashizume、S. Kasai、N.-J. Wu、H. Hasegawa (1.Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido University)

https://doi.org/10.7567/SSDM.1995.D-6-6