Advanced Quality in Epitaxial Layer Transfer by Bond and Etch-Back of Porous Si

Nobuhiko SATO; Kiyofumi SAKAGUCHI; Kenji YAMAGATA; Yasutomo FUJIYAMA; Jun NAKAYAMA; Takao YONEHARA

doi:https://doi.org/10.7567/SSDM.1995.PC-10-3

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜 1995年8月24日
International House, Osaka, Japan

[PC-10-3] Advanced Quality in Epitaxial Layer Transfer by Bond and Etch-Back of Porous Si

Nobuhiko SATO、Kiyofumi SAKAGUCHI、Kenji YAMAGATA、Yasutomo FUJIYAMA、Jun NAKAYAMA、Takao YONEHARA (1.Device Development Center, R&D Headquarters, Canon Inc.)

https://doi.org/10.7567/SSDM.1995.PC-10-3

▲