Advantages of Ultra-Thin SIMOX/CMOS Based on Well-Established 0.8μm Mass-Production Technologies for Low Power 1V PLL Circuits

O. Tsuboi; S. Warashina; K. Sukegawa; S. Kawai; S. Kawamura; S. Sekine; K. Takada; Y. Suzuki

doi:https://doi.org/10.7567/SSDM.1995.PC-10-7

[PC-10-7] Advantages of Ultra-Thin SIMOX/CMOS Based on Well-Established 0.8μm Mass-Production Technologies for Low Power 1V PLL Circuits

O. Tsuboi, S. Warashina, K. Sukegawa, S. Kawai, S. Kawamura, S. Sekine, K. Takada, Y. Suzuki (1.CMOS Process Development Div., Analog LSI Development Div. Fujitsu Ltd.)

https://doi.org/10.7567/SSDM.1995.PC-10-7

1995 International Conference on Solid State Devices and Materials

[PC-10-7] Advantages of Ultra-Thin SIMOX/CMOS Based on Well-Established 0.8μm Mass-Production Technologies for Low Power 1V PLL Circuits