Advantages of Ultra-Thin SIMOX/CMOS Based on Well-Established 0.8μm Mass-Production Technologies for Low Power 1V PLL Circuits

O. Tsuboi; S. Warashina; K. Sukegawa; S. Kawai; S. Kawamura; S. Sekine; K. Takada; Y. Suzuki

doi:https://doi.org/10.7567/SSDM.1995.PC-10-7

[PC-10-7] Advantages of Ultra-Thin SIMOX/CMOS Based on Well-Established 0.8μm Mass-Production Technologies for Low Power 1V PLL Circuits

O. Tsuboi、S. Warashina、K. Sukegawa、S. Kawai、S. Kawamura、S. Sekine、K. Takada、Y. Suzuki (1.CMOS Process Development Div., Analog LSI Development Div. Fujitsu Ltd.)

https://doi.org/10.7567/SSDM.1995.PC-10-7

1995 International Conference on Solid State Devices and Materials

[PC-10-7] Advantages of Ultra-Thin SIMOX/CMOS Based on Well-Established 0.8μm Mass-Production Technologies for Low Power 1V PLL Circuits