[PC-11-3] A Comparative Study of Interface Trap Induced Drain Leakage Current in Various n-MOSFET Structures

Tahui Wang、T. E. Chang、L. P. Chiang、C. Huang (1.Department of Electronics Engineering, Institute of Electronics, National Chiao-Tung University、2.Technology Development Dept., Macronix International Co.)

https://doi.org/10.7567/SSDM.1995.PC-11-3