Development of Sub-Quarter-μm MONOS Type Memory Transistor

Thomas Bohm; Akihiro Nakamura; Hiroshi Aozasa; Machio Yamagishi; Yasutoshi Komatsu

doi:https://doi.org/10.7567/SSDM.1995.PC-11-8

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜 1995年8月24日
International House, Osaka, Japan

[PC-11-8] Development of Sub-Quarter-μm MONOS Type Memory Transistor

Thomas Bohm、Akihiro Nakamura、Hiroshi Aozasa、Machio Yamagishi、Yasutoshi Komatsu (1.Advanced Devices Department, ULSI R&D Laboratories, Semiconductor Company, Sony Corporation)

https://doi.org/10.7567/SSDM.1995.PC-11-8

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