A Novel Planarization of Trench Isolation Using a Polysilicon Layer As a Self-Aligned Mask

Juing-Yi Cheng; Tan Fu Lei; Tien Sheng Chao; Daniel L. W. Yen; B. Y. Jin; C. J. Lin

doi:https://doi.org/10.7567/SSDM.1995.PC-12-2

[PC-12-2] A Novel Planarization of Trench Isolation Using a Polysilicon Layer As a Self-Aligned Mask

Juing-Yi Cheng、Tan Fu Lei、Tien Sheng Chao、Daniel L. W. Yen、B. Y. Jin、C. J. Lin (1.Department of Electronics Engineering and Institute of Electronics National Chiao Tung University and、2.National Nano Device Laboratory、3.Macronix International Co., LTD.)

https://doi.org/10.7567/SSDM.1995.PC-12-2

1995 International Conference on Solid State Devices and Materials

[PC-12-2] A Novel Planarization of Trench Isolation Using a Polysilicon Layer As a Self-Aligned Mask