Elimination of Al Line and Via Resistance Degradation under HTS Test in the Application of F-Doped Oxide as Intermetal Dielectrics

[PC-5-6] Elimination of Al Line and Via Resistance Degradation under HTS Test in the Application of F-Doped Oxide as Intermetal Dielectrics

B. K. Hwang、J. H. Choi、S. W. Lee、K. Fujihara、U. I. Chung、S. I. Lee、M. Y. Lee (1.Semiconductor R&D Center, Samsung Electronics, Co Ltd.)