Elimination of Al Line and Via Resistance Degradation under HTS Test in the Application of F-Doped Oxide as Intermetal Dielectrics

[PC-5-6] Elimination of Al Line and Via Resistance Degradation under HTS Test in the Application of F-Doped Oxide as Intermetal Dielectrics

B. K. Hwang, J. H. Choi, S. W. Lee, K. Fujihara, U. I. Chung, S. I. Lee, M. Y. Lee (1.Semiconductor R&D Center, Samsung Electronics, Co Ltd.)