Excellent Thermally-Stable Epitaxial Channel for Implanted Planar-Type Hetero-Junction Field-Effect Transistors

Shigeharu Matsushita; Emi Fujii; Daijiro Inoue; Satoshi Terada; Seiichi Banba; Kohji Matsumura; Minoru Sawada; Yasoo Harada

doi:https://doi.org/10.7567/SSDM.1995.PD-2-3

[PD-2-3] Excellent Thermally-Stable Epitaxial Channel for Implanted Planar-Type Hetero-Junction Field-Effect Transistors

Shigeharu Matsushita、Emi Fujii、Daijiro Inoue、Satoshi Terada、Seiichi Banba、Kohji Matsumura、Minoru Sawada、Yasoo Harada (1.Microelectronics Research Center, SANYO Electric Co., Ltd.)

https://doi.org/10.7567/SSDM.1995.PD-2-3

1995 International Conference on Solid State Devices and Materials

[PD-2-3] Excellent Thermally-Stable Epitaxial Channel for Implanted Planar-Type Hetero-Junction Field-Effect Transistors