[S-I-2-2] The Valence Band Alignment at Ultra-Thin SiO2/Si(100) Interfaces Determined by High-Resolution X-Ray Photoelectron Spectroscopy

J. L. Alay, M. Fukuda, K. Nakagawa, S. Yokoyama, M. Hirose (1.Research Center for Integrated Systems, Hiroshima University, 2.Department of Electrical Engineering, Hiroshima University)

https://doi.org/10.7567/SSDM.1995.S-I-2-2