Low-Thermal-Budget Process-Controlled Monolayer Level Incorporation of Nitrogen into Ultra-Thin Gate Dielectric Structures: Applications to MOS Devices

Gerald LUCOVSKY; David R. LEE; Sunil V. HATTANGADY; Hiro NIIMI; Chris PARKER; John R. HAUSER

doi:https://doi.org/10.7567/SSDM.1995.S-I-2-4

[S-I-2-4] Low-Thermal-Budget Process-Controlled Monolayer Level Incorporation of Nitrogen into Ultra-Thin Gate Dielectric Structures: Applications to MOS Devices

Gerald LUCOVSKY, David R. LEE, Sunil V. HATTANGADY, Hiro NIIMI, Chris PARKER, John R. HAUSER (1.North Carolina State University, Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering)

https://doi.org/10.7567/SSDM.1995.S-I-2-4

1995 International Conference on Solid State Devices and Materials

[S-I-2-4] Low-Thermal-Budget Process-Controlled Monolayer Level Incorporation of Nitrogen into Ultra-Thin Gate Dielectric Structures: Applications to MOS Devices