Interface States in Top Gate Metal-Silicon Nitride-Silicon Structures

J. Kanicki S. Backert; N. Picard

doi:https://doi.org/10.7567/SSDM.1995.S-I-3-2

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜 1995年8月24日
International House, Osaka, Japan

[S-I-3-2] Interface States in Top Gate Metal-Silicon Nitride-Silicon Structures

J. Kanicki S. Backert、N. Picard (1.Center for Display Technology and Manufacturing The University of Michigan、2.Department of Solid State Physics Ecole Polytechnique)

https://doi.org/10.7567/SSDM.1995.S-I-3-2

▲