New Dielectric Breakdown Model of Local Wearout in Ultra Thin Silicon Dioxides

Kenji OKADA; Satoko KAWASAKI

doi:https://doi.org/10.7567/SSDM.1995.S-I-8-2

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜 1995年8月24日
International House, Osaka, Japan

[S-I-8-2] New Dielectric Breakdown Model of Local Wearout in Ultra Thin Silicon Dioxides

Kenji OKADA、Satoko KAWASAKI (1.Micro Computer Division, Matsushita Electronics Corp.、2.Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.)

https://doi.org/10.7567/SSDM.1995.S-I-8-2

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