Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation

Yasuo TAKAHASHI; Masao NAGASE; Hideo NAMATSU; Kenji KURIHARA; Kazumi IWADATE; Yasuyuki NAKAJIMA; Seiji HORIGUCHI; Katsumi MURASE; Michiharu TABE

doi:https://doi.org/10.7567/SSDM.1995.S-II-4

[S-II-4] Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation

Yasuo TAKAHASHI、Masao NAGASE、Hideo NAMATSU、Kenji KURIHARA、Kazumi IWADATE、Yasuyuki NAKAJIMA、Seiji HORIGUCHI、Katsumi MURASE、Michiharu TABE (1.NTT LSI Laboratories、2.Shizuoka Univ.)

https://doi.org/10.7567/SSDM.1995.S-II-4

1995 International Conference on Solid State Devices and Materials

[S-II-4] Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation