Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation

Yasuo TAKAHASHI; Masao NAGASE; Hideo NAMATSU; Kenji KURIHARA; Kazumi IWADATE; Yasuyuki NAKAJIMA; Seiji HORIGUCHI; Katsumi MURASE; Michiharu TABE

doi:https://doi.org/10.7567/SSDM.1995.S-II-4

[S-II-4] Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation

Yasuo TAKAHASHI, Masao NAGASE, Hideo NAMATSU, Kenji KURIHARA, Kazumi IWADATE, Yasuyuki NAKAJIMA, Seiji HORIGUCHI, Katsumi MURASE, Michiharu TABE (1.NTT LSI Laboratories, 2.Shizuoka Univ.)

https://doi.org/10.7567/SSDM.1995.S-II-4

1995 International Conference on Solid State Devices and Materials

[S-II-4] Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation