Novel Schottky In-Plane Gate Single-Electron Transistors Using GaAs/AlGaAs System Operating up to 10K

Kei-ichiroh JINUSHI; Hiroshi OKADA; Tamotsu HASHIZUME; Hideki HASEGAWA

doi:https://doi.org/10.7567/SSDM.1995.S-II-6

[S-II-6] Novel Schottky In-Plane Gate Single-Electron Transistors Using GaAs/AlGaAs System Operating up to 10K

Kei-ichiroh JINUSHI、Hiroshi OKADA、Tamotsu HASHIZUME、Hideki HASEGAWA (1.Research Center for Interface Quantum Electronics and Graduate School of Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.1995.S-II-6

1995 International Conference on Solid State Devices and Materials

[S-II-6] Novel Schottky In-Plane Gate Single-Electron Transistors Using GaAs/AlGaAs System Operating up to 10K