[S-III-3] Vth Rolloff Free Sub 0.1 μm SOI MOSFETs Using Counter Doping into a Uniformly and Heavily Doped Channel Region Akira Satoh、Kunihiro Suzuki、Toshihiro Sugii (1.Fujitsu Laboratories Ltd.) https://doi.org/10.7567/SSDM.1995.S-III-3
