[S-III-7] A High Performance 0.05μm MOSFET with Thin SOI/Buried Oxide Structure

Kazuya OHUCHI、Ryuji OHBA、Hiromi NIIYAMA、Kazuaki NAKAJIMA、Tomohisa MIZUNO (1.Semiconductor Device Engineering Laboratory, ULSI Research Laboratories, TOSHIBA Corporation)

https://doi.org/10.7567/SSDM.1995.S-III-7