Surface Reaction Controlled W-CVD Technology for 0.1-μm Low-Resistive, Encroachment-Free CMOS-FET Applications

Yoshitaka Nakamura; Nobuyoshi Kobayashi; Digh Hisamoto; Kazunori Umeda; Ryo Nagai

doi:https://doi.org/10.7567/SSDM.1995.S-IV-3

[S-IV-3] Surface Reaction Controlled W-CVD Technology for 0.1-μm Low-Resistive, Encroachment-Free CMOS-FET Applications

Yoshitaka Nakamura、Nobuyoshi Kobayashi、Digh Hisamoto、Kazunori Umeda、Ryo Nagai (1.Semiconductor Development Center, Semiconductor & Integrated Circuits Div., Hitachi, Ltd.、2.Central Research Laboratory, Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1995.S-IV-3

1995 International Conference on Solid State Devices and Materials

[S-IV-3] Surface Reaction Controlled W-CVD Technology for 0.1-μm Low-Resistive, Encroachment-Free CMOS-FET Applications