MBE Growth and Properties of GaN, AlxGa1-xN and AlN on GaN/SiC Substrates

Shizuo FUJITA; M. A. L. JOHNSON; W. H. ROWLAND, JR.; W. C. HUGHES; Y. W. HE; N. A. EL MASRY; J. W. COOK, JR.; J. F. SCHETZINA; J. REN; J. A. EDMOND

doi:https://doi.org/10.7567/SSDM.1995.S-V-10

[S-V-10] MBE Growth and Properties of GaN, AlxGa1-xN and AlN on GaN/SiC Substrates

Shizuo FUJITA, M. A. L. JOHNSON, W. H. ROWLAND, JR., W. C. HUGHES, Y. W. HE, N. A. EL MASRY, J. W. COOK, JR., J. F. SCHETZINA, J. REN, J. A. EDMOND (1.North Carolina State University, 2.Cree Research, Inc.)

https://doi.org/10.7567/SSDM.1995.S-V-10

1995 International Conference on Solid State Devices and Materials

[S-V-10] MBE Growth and Properties of GaN, AlxGa1-xN and AlN on GaN/SiC Substrates