[S-I-4-4] Low-Temperature CVD of SiO2 by Alkoxy-Silane-Iso-Cyanate

Yasutaka UCHIDA, Shu TAKEI, Masakiyo MATSUMURA (1.Department of Electronics and Information Sciences, Nishi-Tokyo Univ., 2.Department of Physical Electronics, Tokyo Inst. of Technology)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-5-1] Low Permittivity Organic Dielectrics for Multilevel Interconnection in High Speed ULSIs

Yoshio HOMMA, Takeshi FURUSAWA, Kikuo KUSUKAWA, Shigeo MORIYAMA Hiroyuki MORISHIMA, Hidetada SATO (1.Central Research Laboratory, Hitachi Ltd., 2.Hitachi Chemical Co. Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-5-2] Fluorine Doped SiO2 for Low Dielectric Constant Films in Sub-Half Micron ULSI Multilevel Interconnection

Nobuo HAYASAKA, Hideshi MIYAJIMA, Yasushi NAKASAKI, Ryota KATSUMATA (1.ULSI Research Laboratories, Toshiba Corp.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-5-3] Formation of SiOF Films by PECVD Using (C2H5O)3SiF

H. Kito, M. Muroyama, M. Sasaki, M. Iwasawa, H. Kimura (1.Process Division, Semiconductor Company, Sony Corporation, 2.Center for Computational Science, Research Center, Sony Corporation)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-5-4] Preparation of Low Dielectric Constant F-Doped SiO2 Films by PECVD

SangWoo LIM, Yukihiro SHIMOGAKI, Yoshiaki NAKANO, Kunio TADA, Hiroshi KOMIYAMA (1.Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo, 2.Department of Electronic Engineering, Faculty of Engineering, University of Tokyo)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-6-1] Developments in Consumables Used in the Chemical Mechanical Polishing of Dielectrics

Srinivasan Sivaram, Robert Tolles, Anantha Sethuraman (1.Intel Corp., 2.Applied Materials, 3.Rodel Corp.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-6-2] H2O-TOP-PECVD: A New Plasma Enhanced CVD Technology Using Alternate TEOS-Ozone Low Pressure CVD and H2O Assisted O3 Plasma Treatment

Koji Kishimoto, Kou Imaoka, Ken-ichi Koyanagi, Tetsuya Homma (1.NEC Corporation, ULSI Device Development Laboratories, 2.Applied Materials Japan, Inc.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-6-3] High Rate Bias Sputtering Filling of SiO2 Film Employing Both Continuous Wave and Time-Modulated Inductively Coupled Plasmas

Y. Kobayashi, Y. Chinzei, H. Asanome, R. Kurosaki, J. Kikuchi, S. Shingubara, Y. Horiike (1.Dept. of Electrical & Electronics Eng. Toyo Univ., 2.Central Laboratory, Toshiba Machine. Corp., 3.Process Fabric. Dev. Fujitsu Corp., 4.Dept. of Electrical Eng. Hiroshima Univ.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-6-4] Low Dielectric Constant Films for ULSI Interconnect Applications

Chien Chiang, Chuanbin Pan, Anne. S. Mack, Yui-lin Ling, Quat Vu, David B. Fraser (1.Intel Corp., Components Research)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-6-5] Nitrogen Doped Fluorinated Amorphous Carbon Thin Films Grown by Plasma Enhanced Chemical Vapor Deposition

Kazuhiko Endo, Toru Tatsumi (1.Microelectronics Research Laboratories, NEC Corporation)

1995 International Conference on Solid State Devices and Materials |PDF Download

375 results (51 - 60)

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