New Method of Extracting Inversion Layer Thickness and Charge Profile and Its Impact on Scaled MOSFETs

Tetsu TANAKA; Toshihiro SUGII; Chenming HU

doi:https://doi.org/10.7567/SSDM.1996.A-1-2

1996 International Conference on Solid State Devices and Materials

1996年8月26日〜 1996年8月29日
Pacifico Yokohama, Yokohama, Japan

[A-1-2] New Method of Extracting Inversion Layer Thickness and Charge Profile and Its Impact on Scaled MOSFETs

Tetsu TANAKA、Toshihiro SUGII、Chenming HU (1.Fujitsu laboratories LTD.、2.Department of Electrical Engineering and Computer Sciences, University of California at Berkeley)

https://doi.org/10.7567/SSDM.1996.A-1-2

▲