The Japan Society of Applied Physics

[A-4-4] Influence of Ion Energy on Carrier Activation and Source/Drain Parasitic Resistance in Low-Energy Ion Implantation for 0.15-μm MOSFETs

Akio NISHIDA, Eiichi MURAKAMI, Shin'ichiro KIMURA (1.Central Research Laboratory, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.1996.A-4-4