[B-1-4] Double Spacer LOCOS Process with Shallow Recess of Silicon for 0.20 μm Isolation

Byung-Jin Cho、Se-Aug Jang、Tae-Sik Song、Seung-Ho Pyi、Jong-Choul Kim (1.Memory R&D Div., HYUNDAI Electronics Ind. Co. Ltd.)

https://doi.org/10.7567/SSDM.1996.B-1-4