[B-4-3] Diffusion of Carbon in SiO2 Films and Its Segregation at Si/SiO2 Interface

I. Mizushima、H. Kamiya、N. Arai、M. Sonoda、M. Yoshiki、S. Takagi、M. Wakamiya、S. Kambayashi、Y. Mikata、S. Mori、M. Kashiwagi (1.Microelectronics Engineering Laboratory, Semiconductor Manufacturing Engineering Center, R&D Center, Toshiba Corporation、2.Toshiba Microelectronics Corporation)

https://doi.org/10.7567/SSDM.1996.B-4-3