[B-4-3] Diffusion of Carbon in SiO2 Films and Its Segregation at Si/SiO2 Interface

I. Mizushima, H. Kamiya, N. Arai, M. Sonoda, M. Yoshiki, S. Takagi, M. Wakamiya, S. Kambayashi, Y. Mikata, S. Mori, M. Kashiwagi (1.Microelectronics Engineering Laboratory, Semiconductor Manufacturing Engineering Center, R&D Center, Toshiba Corporation, 2.Toshiba Microelectronics Corporation)

https://doi.org/10.7567/SSDM.1996.B-4-3