Single Crystalline Silicon Floating Gate Technology for Sub-10 nm Interelectrode Dielectrics

Shigehiko Saida; Yuuichirou Mitani; Hiroaki Hazama; Shigeru Kammbayashi; Ichiro Mizushima; Jun-ichi Shiozawa; Yoshio Ozawa

doi:https://doi.org/10.7567/SSDM.1996.B-5-2

[B-5-2] Single Crystalline Silicon Floating Gate Technology for Sub-10 nm Interelectrode Dielectrics

Shigehiko Saida, Yuuichirou Mitani, Hiroaki Hazama, Shigeru Kammbayashi, Ichiro Mizushima, Jun-ichi Shiozawa, Yoshio Ozawa (1.Microelectronics Engineering Laboratory and ULSI Research Laboratories Toshiba Corp.)

https://doi.org/10.7567/SSDM.1996.B-5-2

1996 International Conference on Solid State Devices and Materials

[B-5-2] Single Crystalline Silicon Floating Gate Technology for Sub-10 nm Interelectrode Dielectrics