Single Crystalline Silicon Floating Gate Technology for Sub-10 nm Interelectrode Dielectrics

Shigehiko Saida; Yuuichirou Mitani; Hiroaki Hazama; Shigeru Kammbayashi; Ichiro Mizushima; Jun-ichi Shiozawa; Yoshio Ozawa

doi:https://doi.org/10.7567/SSDM.1996.B-5-2

[B-5-2] Single Crystalline Silicon Floating Gate Technology for Sub-10 nm Interelectrode Dielectrics

Shigehiko Saida、Yuuichirou Mitani、Hiroaki Hazama、Shigeru Kammbayashi、Ichiro Mizushima、Jun-ichi Shiozawa、Yoshio Ozawa (1.Microelectronics Engineering Laboratory and ULSI Research Laboratories Toshiba Corp.)

https://doi.org/10.7567/SSDM.1996.B-5-2

1996 International Conference on Solid State Devices and Materials

[B-5-2] Single Crystalline Silicon Floating Gate Technology for Sub-10 nm Interelectrode Dielectrics