[C-3-3] Increased Electron Concentration in InAs/AlGaSb Heterostructures Using a Si Planar Doped Ultrathin InAs Quantum Well

S. Sasa、Y. Yamamoto、S. Izumiya、M. Yano、Y. Iwai、M. Inoue (1.Department of Electrical Engineering, Osaka Institute of Technology)

https://doi.org/10.7567/SSDM.1996.C-3-3