[C-3-3] Increased Electron Concentration in InAs/AlGaSb Heterostructures Using a Si Planar Doped Ultrathin InAs Quantum Well

S. Sasa, Y. Yamamoto, S. Izumiya, M. Yano, Y. Iwai, M. Inoue (1.Department of Electrical Engineering, Osaka Institute of Technology)

https://doi.org/10.7567/SSDM.1996.C-3-3