[D-1-3] New Technologies of a WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Performance InGaP/GaAs HBTs

Tohru OKA、Kiyoshi OUCHI、Kazuhiro MOCHIZUKI、Tohru NAKAMURA (1.Central Research Laboratory, Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1996.D-1-3