[D-6-4] Shallow Trench Isolation for Enhancement of Data Retention Times in giga bit DRAM

B. H. Roh、C. S. Yoon、D. U. Choi、M. J. Kim、D. W. Ha、K. N. Kim、J. W. Park (1.Technology Development, Memory Device Business, Samsung Electronics, Co.)

https://doi.org/10.7567/SSDM.1996.D-6-4