High Performance Shallow Trench Isolation for High Density Flash Memory Cells

S. Deleonibus; M. Heitzmann; Y. Gobil; F. Martin; O. Demolliens; B. Guillaumot; P. Candelier; J. C. Guibert

doi:https://doi.org/10.7567/SSDM.1996.D-7-2

1996 International Conference on Solid State Devices and Materials

1996年8月26日〜 1996年8月29日
Pacifico Yokohama, Yokohama, Japan

[D-7-2] High Performance Shallow Trench Isolation for High Density Flash Memory Cells

S. Deleonibus、M. Heitzmann、Y. Gobil、F. Martin、O. Demolliens、B. Guillaumot、P. Candelier、J. C. Guibert (1.LETI(CEA);SGS-THOMSON Departement de Microelectronique)

https://doi.org/10.7567/SSDM.1996.D-7-2

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