[PC-3-2] A Novel Dual Gate CMOS Technology Using Low Energy Phosphorous/Boron Implantation and Arsenic Pre-Amorphization

Hiroaki Nakaoka、Atsushi Hori、Hiroyuki Umimoto、Akihiro Kanda (1.Semiconductor Research Center, Matsushita Electric Ind., Co., Ltd.)

https://doi.org/10.7567/SSDM.1996.PC-3-2