A 100±15nm Thick 8-inch Bonded SOI Fabricated with a Selective Polishing Method

M. Hashimoto; Y. Ohkubo; M. Shimanoe; M. Nakamura; H. Sato; H. Komatsu; Y. Miyazawa

doi:https://doi.org/10.7567/SSDM.1996.PC-5-5

1996 International Conference on Solid State Devices and Materials

Aug 26, 1996 - Aug 29, 1996
Pacifico Yokohama, Yokohama, Japan

[PC-5-5] A 100±15nm Thick 8-inch Bonded SOI Fabricated with a Selective Polishing Method

M. Hashimoto, Y. Ohkubo, M. Shimanoe, M. Nakamura, H. Sato, H. Komatsu, Y. Miyazawa (1.ULSI R&D Laboratories, Semiconductor Company, Sony Corporation)

https://doi.org/10.7567/SSDM.1996.PC-5-5

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