650nm-Band High Power AlGaInP Visible Laser Diodes Fabricated by Reactive Ion Beam Etching Using Cl2/N2 Mixture

Isao KIDOGUCHI; Hideto ADACHI; Kiyotake TANAKA; Toshiya FUKUHISA; Masaya MANNOH; Akira TAKAMORI

doi:https://doi.org/10.7567/SSDM.1996.PC-7-4

[PC-7-4] 650nm-Band High Power AlGaInP Visible Laser Diodes Fabricated by Reactive Ion Beam Etching Using Cl2/N2 Mixture

Isao KIDOGUCHI、Hideto ADACHI、Kiyotake TANAKA、Toshiya FUKUHISA、Masaya MANNOH、Akira TAKAMORI (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.1996.PC-7-4

1996 International Conference on Solid State Devices and Materials

[PC-7-4] 650nm-Band High Power AlGaInP Visible Laser Diodes Fabricated by Reactive Ion Beam Etching Using Cl2/N2 Mixture