Formation of Ultra-Shallow and Low-Leakage p+n Junctions by Low-Temperature Post-Implantation Annealing

Akira NAKADA; Kei KANEMOTO; Mauricio Massazumi OKA; Yukio TAMAI; Tadahiro OHMI

doi:https://doi.org/10.7567/SSDM.1996.PD-4-2

[PD-4-2] Formation of Ultra-Shallow and Low-Leakage p+n Junctions by Low-Temperature Post-Implantation Annealing

Akira NAKADA、Kei KANEMOTO、Mauricio Massazumi OKA、Yukio TAMAI、Tadahiro OHMI (1.Department of Electronic Engineering, Faculty of Engineering, Tohoku University、2.Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University)

https://doi.org/10.7567/SSDM.1996.PD-4-2

1996 International Conference on Solid State Devices and Materials

[PD-4-2] Formation of Ultra-Shallow and Low-Leakage p+n Junctions by Low-Temperature Post-Implantation Annealing